Andover, MA, United States of America

Seung Yeon Kim

This inventor holds 11 USPTO granted patents and 1 published patent application. Top assignee: Globalfoundries Inc.. Active years: 2014-2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Seung Yeon Kim. Retrieved from https://idiyas.com/inventor/seung-yeon-kim

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 11 

% Patents Active = 81.8

Average Co-Inventor Count = 6.9

ph-index = 5

Forward Citations = 62(Granted Patents)


Location History:

  • Grand Cayman, KY (2014 - 2015)
  • North Andover, MA (US) (2015)
  • Andover, MA (US) (2015 - 2016)
  • Mechanicville, NY (US) (2015 - 2017)

Company Filing History:


Years Active: 2014-2017

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11 patents (USPTO):Explore Patents

Title: Innovations of Seung Yeon Kim

Introduction

Seung Yeon Kim is a prominent inventor based in Andover, MA (US). He has made significant contributions to the field of semiconductor technology, holding a total of 11 patents. His work focuses on improving the reliability and efficiency of semiconductor devices.

Latest Patents

Among his latest patents is the invention titled "Conformal nitridation of one or more fin-type transistor layers." This patent describes methods and structures for fin-type transistor fabrication that include nitrided conformal layers, enhancing the reliability of semiconductor devices. The process involves providing material layers that conformally cover a fin extending above a substrate, which includes a gate dielectric layer. A conformal nitridation process is then performed over the exposed surface of these material layers, resulting in a conformal nitrided surface.

Another notable patent is "Shallow trench isolation integration methods and devices formed thereby." This invention relates to forming semiconductor devices, such as TSV devices, with a 'buffer zone' or gap layer between the TSV and transistors. The gap layer is filled with a low-stress thin film material that helps control stresses and crack formation in the devices. Additionally, this gap layer maintains a spatial distance between TSVs and transistors, reducing the adverse effects of temperature excursions.

Career Highlights

Seung Yeon Kim is currently employed at GlobalFoundries Inc., a leading semiconductor manufacturer. His work at the company has been instrumental in advancing semiconductor technologies and improving device performance.

Collaborations

Throughout his career, Seung Yeon Kim has collaborated with notable colleagues, including Wei Hua Tong and Huang Liu. These collaborations have contributed to the development of innovative solutions in the semiconductor industry.

Conclusion

Seung Yeon Kim's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence the development of reliable and efficient semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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