The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2016
Filed:
Mar. 07, 2014
Globalfoundries Inc., Grand Cayman, KY;
Wei Hua Tong, Mechanicville, NY (US);
Tien-Ying Luo, Clifton Park, NY (US);
Yan Ping Shen, Saratoga Springs, NY (US);
Feng Zhou, Beacon, NY (US);
Jun Lian, Mechanicville, NY (US);
Haoran Shi, Saratoga Springs, NY (US);
Min-hwa Chi, Malta, NY (US);
Jin Ping Liu, Ballston Lake, NY (US);
Haiting Wang, Clifton Park, NY (US);
Seung Kim, Mechanicville, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
Fin-type transistor fabrication methods and structures are provided having one or more nitrided conformal layers, to improve reliability of the semiconductor device. The method includes, for example, providing at least one material layer disposed, in part, conformally over a fin extending above a substrate, the material layer(s) including a gate dielectric layer; and performing a conformal nitridation process over an exposed surface of the material layer(s), the conformal nitridation process forming an exposed, conformal nitrided surface.