logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9385030 B1

PDFFull Text
Expired
Date of Patent:
Jul. 05, 2016

Filed:

Apr. 30, 2014

Spacer to prevent source-drain contact encroachment

Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Yong M. Lee, Mechanicville, NY (US);

Yue Hu, Mechanicville, NY (US);

Wen-Pin Peng, Clifton Park, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorney:

Williams Morgan, P.C.

Primary Examiner:

Matthew Landau

Assistant Examiner:

Igwe U Anya

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/84 (2006.01); H01L 21/768 (2006.01); H01L 21/283 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76831 (2013.01); H01L 21/283 (2013.01); H01L 21/76802 (2013.01); H01L 29/41775 (2013.01); H01L 29/66545 (2013.01);
Abstract

Aspects of the present invention relate to approaches for preventing contact encroachment in a semiconductor device. A first portion of a contact trench can be etched partway to a source-drain region of the semiconductor device. A dielectric liner can be deposited in this trench. A second etch can be performed on the lined trench to etch the contact trench channel the remainder of the way to the source-drain region. This leaves a portion of the dielectric liner remaining in the trench (e.g., covering the vertical walls of the trench) after the second etch.

Find Patent Forward Citations

Quick Actions:

Lee, Yong. (2016). Spacer to prevent source-drain contact encroachment (U.S. Patent No. 9385030). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9385030

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…