The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2014
Filed:
Jul. 13, 2012
Michael V. Aquilino, Wappingers Falls, NY (US);
Xiang HU, Clifton Park, NY (US);
Daniel J. Jaeger, Wappingers Falls, NY (US);
Byeong Y. Kim, Lagrangeville, NY (US);
Yong M. Lee, Singapore, SG;
Ying LI, Ridgefield, CT (US);
Reinaldo A. Vega, Wappingers Falls, NY (US);
Michael V. Aquilino, Wappingers Falls, NY (US);
Xiang Hu, Clifton Park, NY (US);
Daniel J. Jaeger, Wappingers Falls, NY (US);
Byeong Y. Kim, Lagrangeville, NY (US);
Yong M. Lee, Singapore, SG;
Ying Li, Ridgefield, CT (US);
Reinaldo A. Vega, Wappingers Falls, NY (US);
International Business Machines Corporation, Armonk, NY (US);
GLOBALFOUNDRIES Inc., , KY;
Abstract
A method for formation of a sealed shallow trench isolation (STI) region for a semiconductor device includes forming a STI region in a substrate, the STI region comprising a STI fill; forming a sealing recess in the STI fill of the STI region; and forming a sealing layer in the sealing recess over the STI fill.