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For the Inventor, By the Inventor

Newburgh, NY, United States of America

Ying Li

This inventor holds 31 USPTO granted patents and 2 published patent applications and 1 EPO patent, primarily in Semiconductor Devices. Top assignees: International Business Machines Corporation, Globalfoundries Inc., Advanced Micro Devices Corporation. Active years: 1996-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ying Li. Retrieved from https://idiyas.com/inventor/ying-li-p425lz1t

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 31 

% Patents Active = 48.4


Average Co-Inventor Count = 3.4

ph-index = 8

Forward Citations = 214(Granted Patents)


Location History:

  • Austin, TX (US) (1996)
  • Ridgefield, CT (US) (2013 - 2014)
  • Newburgh, NY (US) (2007 - 2015)

Company Filing History:

goldMedal28 out of 166,409 
 
International Business Machines Corporation
 patents
silverMedal3 out of 5,671 
 
Globalfoundries Inc.
 patents
bronzeMedal2 out of 13,175 
 
Advanced Micro Devices Corporation
 patents
where one patent can have more than one assignee

Years Active: 1996-2015

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Areas of Expertise:
Self-Aligned Contacts
Shallow Trench Isolation
Replacement Metal Gates
Epitaxy
Electrical Fuse
Interconnections
Conductive Type
Dopant Measurement
Silicide
Dielectric Metal Oxide
Advanced Interconnect
PECVD Silicon Nitride
31 patents (USPTO):Explore Patents
1. 9214541 - Self-aligned contact for replacement gate devices (2015-12-15),
2. 9059134 - Self-aligned contacts for high k/metal gate process flow (2015-06-16),
3. 8969163 - Forming facet-less epitaxy with self-aligned isolation (2015-03-03),
4. 8927408 - Self-aligned contact employing a dielectric metal oxide spacer (2015-01-06),
5. 8859388 - Sealed shallow trench isolation region (2014-10-14),
6. 8685818 - Method of forming a shallow trench isolation embedded polysilicon resistor (2014-04-01),
7. 8680617 - Split level shallow trench isolation for area efficient body contacts in SOI MOSFETS (2014-03-25),
8. 8658486 - Forming facet-less epitaxy with a cut mask (2014-02-25),
9. 8642424 - Replacement metal gate structure and methods of manufacture (2014-02-04),
10. 8637941 - Self-aligned contact employing a dielectric metal oxide spacer (2014-01-28),
11. 8580628 - Integrated circuit contact structure and method (2013-11-12),
12. 8536656 - Self-aligned contacts for high k/metal gate process flow (2013-09-17),
13. 8492286 - Method of forming E-fuse in replacement metal gate manufacturing process (2013-07-23),
14. 8435891 - Converting metal mask to metal-oxide etch stop layer and related semiconductor structure (2013-05-07),
15. 8426300 - Self-aligned contact for replacement gate devices (2013-04-23),

Title: Inventor Ying Li: Revolutionizing Technology in Newburgh

Introduction: Ying Li, a visionary inventor based in Newburgh, NY, is renowned for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Li holds several patents in the areas of artificial intelligence, renewable energy, and biotechnology, showcasing his diverse range of expertise and innovative spirit.

Career Highlights: With a career spanning over two decades, Ying Li has worked with leading tech companies, research institutions, and universities to develop cutting-edge solutions that have revolutionized various industries.

Collaborations: Li has collaborated with top scientists, engineers, and researchers from around the globe, fostering a culture of innovation and excellence in all his projects. His collaborative efforts have led to the creation of game-changing technologies that have had a lasting impact on society.

Conclusion: Ying Li's passion for innovation, coupled with his relentless drive to push the boundaries of what is possible, cements his legacy as a pioneering inventor whose work continues to shape the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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