The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2014
Filed:
May. 23, 2012
Michael Vincent Aquilino, Hopewell Junction, NY (US);
Byeong Yeol Kim, LaGrangeville, NY (US);
Ying LI, Newburgh, NY (US);
Carl John Radens, LaGrangeville, NY (US);
Michael Vincent Aquilino, Hopewell Junction, NY (US);
Byeong Yeol Kim, LaGrangeville, NY (US);
Ying Li, Newburgh, NY (US);
Carl John Radens, LaGrangeville, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of forming a semiconductor structure on a substrate is provided. The method may include preparing a continuous active layer on a region of the substrate and depositing a first raised epitaxial layer on a first region of the continuous active layer. A second raised epitaxial layer is also deposited on a second region of the continuous active layer such that the first raised epitaxial layer is in close proximity to the second raised epitaxial layer. A mask may be used to etch a trench structure into the continuous active layer at both the first and the second raised epitaxial layer, whereby the etched trench structure is filled with isolation material for electrically isolating the first raised epitaxial layer from the second raised epitaxial layer.