The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 25, 2014

Filed:

Oct. 06, 2009
Applicants:

Ying LI, Newburgh, NY (US);

Shreesh Narasimha, Beacon, NY (US);

Werner A. Rausch, Stormville, NY (US);

Inventors:

Ying Li, Newburgh, NY (US);

Shreesh Narasimha, Beacon, NY (US);

Werner A. Rausch, Stormville, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
Abstract

Disclosed is an SOI device on a bulk silicon layer which has an FET region, a body contact region and an STI region. The FET region is made of an SOI layer and an overlying gate. The STI region includes a first STI layer separating the SOI device from an adjacent SOI device. The body contact region includes an extension of the SOI layer, a second STI layer on the extension and a body contact in contact with the extension. The first and second STI layers are contiguous and of different thicknesses so as to form a split level STI.


Find Patent Forward Citations

Li, Ying. (2014). Split level shallow trench isolation for area efficient body contacts in soi mosfets (U.S. Patent No. 8680617). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8680617

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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