The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2013
Filed:
Jun. 02, 2011
Brett H. Engel, Hopewell Junction, NY (US);
Ying LI, Newburgh, NY (US);
Viraj Y. Sardesai, Poughkeepsie, NY (US);
Richard S. Wise, Newburgh, NY (US);
Brett H. Engel, Hopewell Junction, NY (US);
Ying Li, Newburgh, NY (US);
Viraj Y. Sardesai, Poughkeepsie, NY (US);
Richard S. Wise, Newburgh, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method includes providing a semiconductor structure including a plurality of devices; depositing a nitride cap over the semiconductor structure; forming an aluminum mask over the nitride cap, the aluminum mask including a plurality of first openings; converting the aluminum mask to an aluminum oxide etch stop layer; and performing middle-of-line fabrication processing, leaving the aluminum oxide etch stop layer in place. A semiconductor structure includes a plurality of devices on a substrate; a nitride cap over the plurality of devices; an aluminum oxide etch stop layer over the nitride cap; an inter-level dielectric (ILD) over the aluminum oxide etch stop layer; and a plurality of contacts extending through the ILD, the aluminum oxide etch stop layer and the nitride cap to the plurality of devices.