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For the Inventor, By the Inventor

Hopewell Junction, NY, United States of America

Brett H Engel

USPTO Granted Patents = 20 

Average Co-Inventor Count = 4.9

ph-index = 8

Forward Citations = 712(Granted Patents)


Location History:

  • Fishkill, NY (US) (2002 - 2003)
  • Wappingers Falls, NY (US) (2004 - 2007)
  • Hopewell Junction, NY (US) (2004 - 2015)
  • Ridgefield, CT (US) (2015 - 2019)

Company Filing History:

goldMedal18 out of 164,108 
 
International Business Machines Corporation
 patents
silverMedal3 out of 5,671 
 
Globalfoundries Inc.
 patents
bronzeMedal2 out of 14,705 
 
Infineon Technologies Ag
 patents
4. 2 out of 2,867 
 
Stmicroelectronics Gmbh
 patents
5. 1 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents
6. 1 out of 832,680 
Other
 patents
where one patent can have more than one assignee

Years Active: 2002-2019

where 'Filed Patents' based on already Granted Patents

20 patents (USPTO):
1. 10319633 - Diffusion barrier layer formation (2019-06-11),
2. 10170359 - Diffusion barrier layer formation (2019-01-01),
3. 9847251 - Diffusion barrier layer formation (2017-12-19),
4. 9406554 - Diffusion barrier layer formation (2016-08-02),
5. 9224675 - Automatic capacitance tuning for robust middle of the line contact and silicide applications (2015-12-29),
6. 9000564 - Precision polysilicon resistors (2015-04-07),
7. 8940634 - Overlapping contacts for semiconductor device (2015-01-27),
8. 8580628 - Integrated circuit contact structure and method (2013-11-12),
9. 8435891 - Converting metal mask to metal-oxide etch stop layer and related semiconductor structure (2013-05-07),
10. 7397073 - Barrier dielectric stack for seam protection (2008-07-08),
11. 7163883 - Edge seal for a semiconductor device (2007-01-16),
12. 7098676 - Multi-functional structure for enhanced chip manufacturibility and reliability for low k dielectrics semiconductors and a crackstop integrity screen and monitor (2006-08-29),
13. 7008803 - Method of reworking structures incorporating low-k dielectric materials (2006-03-07),
14. 6914320 - Bilayer HDP CVD/PE CVD cap in advanced BEOL interconnect structures and method thereof (2005-07-05),
15. 6887783 - Bilayer HDP CVD/PE CVD cap in advance BEOL interconnect structures and method thereof (2005-05-03),

Title: The Inventive Mind of Brett H Engel

Introduction:

Brett H Engel, a prolific inventor hailing from Hopewell Junction, NY (US), has made significant contributions in the field of diffusion barrier layer formation through his numerous patented innovations.

Latest Patents:

Engel's latest patents revolve around a method for forming a titanium nitride (TiN) diffusion barrier. This method involves a precise sequence of exposing a deposition surface to titanium-containing precursors and nitrogen-rich plasma pulses to create distinct layers with varying nitrogen concentrations, effectively preventing fluorine diffusion.

Career Highlights:

With an impressive portfolio of 20 patents to his name, Brett H Engel has showcased his expertise in the intricate realm of diffusion barrier technology. He has garnered recognition for his groundbreaking methods that play a crucial role in enhancing the functionality and reliability of electronic devices.

Collaborations:

Throughout his career, Brett H Engel has collaborated with esteemed companies such as IBM (International Business Machines Corporation) and Globalfoundries Inc. His partnerships with coworkers like Vincent James McGahay and Domingo A Ferrer have further enriched his innovative pursuits, fostering a dynamic environment for shared knowledge and expertise.

Conclusion:

In conclusion, Brett H Engel stands as a shining example of ingenuity and dedication in the realm of patent innovation. His groundbreaking work in diffusion barrier layer formation serves as a testament to his unwavering commitment to pushing the boundaries of technological advancement.

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