The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2005
Filed:
Aug. 28, 2003
Tze-chiang Chen, Yorktown Heights, NY (US);
Brett H. Engel, Wappingers Falls, NY (US);
John A. Fitzsimmons, Poughkeepsie, NY (US);
Terence Kane, Wappingers Falls, NY (US);
Naftall E. Lustig, Croton on Hudson, NY (US);
Ann Mcdonald, New Windsor, NY (US);
Vincent Mcgahay, Poughkeepsie, NY (US);
Soon-cheon Seo, White Plains, NY (US);
Anthony K. Stamper, Williston, VT (US);
Yun Yu Wang, Poughquag, NY (US);
Erdem Kaltalioglu, Wappingers Falls, NY (US);
Tze-Chiang Chen, Yorktown Heights, NY (US);
Brett H. Engel, Wappingers Falls, NY (US);
John A. Fitzsimmons, Poughkeepsie, NY (US);
Terence Kane, Wappingers Falls, NY (US);
Naftall E. Lustig, Croton on Hudson, NY (US);
Ann McDonald, New Windsor, NY (US);
Vincent McGahay, Poughkeepsie, NY (US);
Soon-Cheon Seo, White Plains, NY (US);
Anthony K. Stamper, Williston, VT (US);
Yun Yu Wang, Poughquag, NY (US);
Erdem Kaltalioglu, Wappingers Falls, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Infineon Technologies AG, Munich, DE;
Abstract
An advanced back-end-of-line (BEOL) metallization structure is disclosed. The structure includes a bilayer diffusion barrier or cap, where the first cap layer is formed of a dielectric material preferably deposited by a high density plasma chemical vapor deposition (HDP CVD) process, and the second cap layer is formed of a dielectric material preferably deposited by a plasma-enhanced chemical vapor deposition (PE CVD) process. A method for forming the BEOL metallization structure is also disclosed. The invention is particularly useful in interconnect structures comprising low-k dielectric material for the inter-layer dielectric (ILD) and copper for the conductors.