The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2015
Filed:
Dec. 21, 2012
Stmicroelectronics, Inc., Coppell, TX (US);
International Business Machines Corporation, Armonk, NY (US);
Globalfoundries Inc., Grand Cayman, KY;
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Pietro Montanini, Albany, NY (US);
Gerald Leake, Jr., Wallkill, NY (US);
Brett H. Engel, Ridgefield, CT (US);
Roderick Mason Miller, Mechanicville, NY (US);
Ju Youn Kim, Seoul, KR;
STMicroelectronics, Inc., Coppell, TX (US);
International Business Machines Corporation, Armonk, NY (US);
GlobalFoundries, Inc., Grand Cayman, KY;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Use of a replacement metal gate (RMG) process provides an opportunity to create precision polysilicon resistors alongside metal gate transistors. During formation of a sacrificial polysilicon gate, the precision polysilicon resistor can also be formed from the same polysilicon film. The polysilicon resistor can be slightly recessed so that a protective insulating layer can cover the resistor during subsequent replacement of the sacrificial gate with a metal gate. The final structure of the precision polysilicon resistor fabricated using such a process is more compact and less complex than existing structures that provide metal resistors for integrated circuits having metal gate transistors. Furthermore, the precision polysilicon resistor can be freely tuned to have a desired sheet resistance by either implanting the polysilicon film with dopants, adjusting the polysilicon film thickness, or both.