The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2015
Filed:
Jun. 29, 2011
Brett H. Engel, Hopewell Junction, NY (US);
Lindsey Hall, Pleasant Valley, NY (US);
David F. Hilscher, Hopewell Junction, NY (US);
Randolph F. Knarr, Putnam Valley, NY (US);
Steven R. Soss, Cornwall, NY (US);
Jin Z. Wallner, Pleasant Valley, NY (US);
Brett H. Engel, Hopewell Junction, NY (US);
Lindsey Hall, Pleasant Valley, NY (US);
David F. Hilscher, Hopewell Junction, NY (US);
Randolph F. Knarr, Putnam Valley, NY (US);
Steven R. Soss, Cornwall, NY (US);
Jin Z. Wallner, Pleasant Valley, NY (US);
International Business Machines Corporation, Armonk, NY (US);
GLOBALFOUNDRIES, Inc., , KY;
STMicroelectronics, Inc., Coppell, TX (US);
Abstract
A method of forming overlapping contacts in a semiconductor device includes forming a first contact in a dielectric layer; etching the dielectric layer to form a recess adjacent to the first contact and removing a top portion of the first contact while etching the dielectric layer, wherein a bottom portion of the first contact remains in the dielectric layer after the recess is formed in the dielectric layer; and forming a second contact in the recess adjacent to the bottom portion of the first contact and on top of a top surface of the bottom portion of the first contact.