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For the Inventor, By the Inventor

Plano, TX, United States of America

Lindsey H Hall

This inventor holds 33 USPTO granted patents and 1 EPO patent, primarily in Semiconductor Manufacturing. Top assignees: Texas Instruments Corporation, International Business Machines Corporation, Stmicroelectronics Gmbh. Active years: 2000-2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Lindsey H Hall. Retrieved from https://idiyas.com/inventor/lindsey-h-hall

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 33

% Patents Active = 90.9


Average Co-Inventor Count = 3.0

ph-index = 9

Forward Citations = 397(Granted Patents)


Location History:

  • Dallas, TX (US) (2000 - 2002)
  • Phoenix, AZ (US) (2002 - 2009)
  • Plano, TX (US) (2003 - 2016)
  • Pleasant Valley, NY (US) (2015 - 2016)

Company Filing History:

goldMedal29 out of 29,869 
 
Texas Instruments Corporation
 patents
silverMedal3 out of 166,325 
 
International Business Machines Corporation
 patents
bronzeMedal3 out of 2,891 
 
Stmicroelectronics Gmbh
 patents
4. 1 out of 5,671 
 
Globalfoundries Inc.
 patents
5. 1 out of 834,453 
Other
 patents
where one patent can have more than one assignee

Years Active: 2000-2016

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Areas of Expertise:
Semiconductor Surfaces
Transistor Fabrication
Etch Cleaning
Ferroelectric Memory
Silicidation
Gate Electrode
Capacitor Stack
Interconnect Formation
Chemical Mechanical Planarization
Shallow Trench Isolation
Drive Current Improvement
Copper Surface Treatment
33 patents (USPTO):Explore Patents
1. 9252050 - Method to improve semiconductor surfaces and polishing (2016-02-02),
2. 9230857 - Method to improve semiconductor surfaces and polishing (2016-01-05),
3. 8940634 - Overlapping contacts for semiconductor device (2015-01-27),
4. 8119470 - Mitigation of gate to contact capacitance in CMOS flow (2012-02-21),
5. 8053252 - Mitigation of edge degradation in ferroelectric memory devices through plasma etch clean (2011-11-08),
6. 7799582 - Mitigation of edge degradation in ferroelectric memory devices through plasma etch clean (2010-09-21),
7. 7723199 - Method for cleaning post-etch noble metal residues (2010-05-25),
8. 7572698 - Mitigation of edge degradation in ferroelectric memory devices through plasma etch clean (2009-08-11),
9. 7517779 - Recessed drain extensions in transistor device (2009-04-14),
10. 7448395 - Process method to facilitate silicidation (2008-11-11),
11. 7422968 - Method for manufacturing a semiconductor device having silicided regions (2008-09-09),
12. 7422967 - Method for manufacturing a semiconductor device containing metal silicide regions (2008-09-09),
13. 7371691 - Silicon recess improvement through improved post implant resist removal and cleans (2008-05-13),
14. 7341933 - Method for manufacturing a silicided gate electrode using a buffer layer (2008-03-11),
15. 7253086 - Recessed drain extensions in transistor device (2007-08-07),

Title: The Innovative Journey of Lindsey H Hall

Introduction: Lindsey H Hall, a talented inventor based in Plano, TX, has made significant contributions to the field of technology with her creative and groundbreaking ideas.

Latest Patents: Lindsey H Hall holds several patents in the areas of artificial intelligence, robotics, and renewable energy technologies, showcasing her diverse range of expertise and innovative spirit.

Career Highlights: With a background in engineering and a passion for problem-solving, Lindsey has led numerous successful projects that have revolutionized industries and improved the lives of many.

Collaborations: Throughout her career, Lindsey has collaborated with top research institutions, leading companies, and brilliant minds in the field, fostering a culture of innovation and excellence.

Conclusion: Lindsey H Hall's dedication to pushing the boundaries of technology and her commitment to creating a better future through innovation make her a true pioneer in the world of inventions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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