The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2010
Filed:
Jul. 14, 2009
Kezhakkedath R. Udayakumar, Dallas, TX (US);
Lindsey H. Hall, Plano, TX (US);
Francis G. Celii, Dallas, TX (US);
Scott R. Summerfelt, Garland, TX (US);
Kezhakkedath R. Udayakumar, Dallas, TX (US);
Lindsey H. Hall, Plano, TX (US);
Francis G. Celii, Dallas, TX (US);
Scott R. Summerfelt, Garland, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A ferroelectric memory device is fabricated while mitigating edge degradation. A bottom electrode is formed over one or more semiconductor layers. A ferroelectric layer is formed over the bottom electrode. A top electrode is formed over the ferroelectric layer. The top electrode, the ferroelectric layer, and the bottom electrode are patterned or etched. A dry clean is performed that mitigates edge degradation. A wet etch/clean is then performed.