The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2009
Filed:
Jul. 02, 2007
Lindsey H. Hall, Phoenix, AZ (US);
Lindsey H. Hall, Phoenix, AZ (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method of forming an integrated circuit transistor (). The method provides a first semiconductor region () and forms () a gate structure () in a fixed position relative to the first semiconductor region. The gate structure has a first sidewall and a second sidewall (). The method also forms at least a first layer () adjacent the first sidewall and the second sidewall. The method also forms () at least one recess () in the first semiconductor region and extending laterally outward from the gate structure. Additional steps in the method are first, oxidizing () the at least one recess such that an oxidized material is formed therein, second, stripping () at least a portion of the oxidized material, and third, forming () a second semiconductor region () in the at least one recess.