The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2016
Filed:
Sep. 11, 2012
Lindsey H. Hall, Pleasant Valley, NY (US);
Michael Hatzistergos, Beacon, NY (US);
Ahmet S. Ozcan, Chappaqua, NY (US);
Filippos Papadatos, Elmsford, NY (US);
Yiyi Wang, Chappaqua, NY (US);
Lindsey H. Hall, Pleasant Valley, NY (US);
Michael Hatzistergos, Beacon, NY (US);
Ahmet S. Ozcan, Chappaqua, NY (US);
Filippos Papadatos, Elmsford, NY (US);
Yiyi Wang, Chappaqua, NY (US);
International Business Machines Corporation, Armonk, NY (US);
STMicroelectronics, Inc., Coppell, TX (US);
Abstract
A method of forming a semiconductor device is disclosed. The method including providing a substrate with at least one insulating layer disposed thereon, the at least one insulating layer including a trench; forming at least one liner layer on the at least one insulating layer; forming a nucleation layer on the at least one liner layer; forming a first metal film on a surface of the nucleation layer; etching the first metal film; and depositing a second metal film on the etched surface of the first metal film, the second metal film substantially forming an overburden above the trench.