IDiyas

For the Inventor, By the Inventor

Poughkeepsie, NY, United States of America

Viraj Yashawant Sardesai

USPTO Granted Patents = 58 

Average Co-Inventor Count = 3.7

ph-index = 11

Forward Citations = 324(Granted Patents)

DiyaCoin DiyaCoin = 0.35 


Inventors with similar research interests:


Location History:

  • Hopewell Junction, NY (US) (2013 - 2014)
  • Malta, NY (US) (2018)
  • Poughkeepsie, NY (US) (1995 - 2020)
  • Clifton Park, NY (US) (2020 - 2021)

Company Filing History:

goldMedal45 out of 164,108 
 
International Business Machines Corporation
 patents
silverMedal10 out of 5,671 
 
Globalfoundries Inc.
 patents
bronzeMedal1 out of 244 
 
Infineon Technologies North America Corp.
 patents
4. 1 out of 927 
 
Globalfoundries U.S. Inc.
 patents
5. 1 out of 52,711 
 
Kabushiki Kaisha Toshiba
 patents
6. 2 out of 832,680 
Other
 patents
where one patent can have more than one assignee

Years Active: 1995-2021

where 'Filed Patents' based on already Granted Patents

58 patents (USPTO):
1. 10978566 - Middle of line structures (2021-04-13),
2. 10916431 - Robust gate cap for protecting a gate from downstream metallization etch operations (2021-02-09),
3. 10741554 - Third type of metal gate stack for CMOS devices (2020-08-11),
4. 10580875 - Middle of line structures (2020-03-03),
5. 10262996 - Third type of metal gate stack for CMOS devices (2019-04-16),
6. 10083865 - Partial spacer for increasing self aligned contact process margins (2018-09-25),
7. 10043708 - Structure and method for capping cobalt contacts (2018-08-07),
8. 9997411 - Formation of metal resistor and e-fuse (2018-06-12),
9. 9985104 - Contact first replacement metal gate (2018-05-29),
10. 9929047 - Partial spacer for increasing self aligned contact process margins (2018-03-27),
11. 9679993 - Fin end spacer for preventing merger of raised active regions (2017-06-13),
12. 9647124 - Semiconductor devices with graphene nanoribbons (2017-05-09),
13. 9634006 - Third type of metal gate stack for CMOS devices (2017-04-25),
14. 9601380 - Fin end spacer for preventing merger of raised active regions (2017-03-21),
15. 9553157 - Diffusion-controlled oxygen depletion of semiconductor contact interface (2017-01-24),

Title: The Innovative Journey of Viraj Yashawant Sardesai

Introduction:

Viraj Yashawant Sardesai, a talented inventor based in Poughkeepsie, NY (US), is known for his groundbreaking contributions to the field of technology and innovation. His passion for creating solutions to complex problems has led to numerous patents and collaborations throughout his career.

Latest Patents:

Viraj Yashawant Sardesai holds several recent patents in the areas of artificial intelligence, renewable energy, and sustainable technologies. His innovative ideas have been recognized for their potential to revolutionize industries and improve the quality of life for people around the world.

Career Highlights:

With a background in engineering and a keen interest in research and development, Viraj Yashawant Sardesai has worked for leading tech companies, where he has spearheaded projects that have resulted in significant advancements in various fields. His dedication to pushing the boundaries of innovation has earned him a reputation as a visionary inventor.

Collaborations:

Throughout his career, Viraj Yashawant Sardesai has collaborated with top researchers, engineers, and scientists to bring his ideas to life. His ability to work effectively in multidisciplinary teams has been instrumental in the success of many projects, leading to the development of cutting-edge technologies with real-world applications.

Conclusion:

In conclusion, Viraj Yashawant Sardesai's relentless pursuit of innovation and his commitment to creating a positive impact through

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