The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2017
Filed:
Oct. 07, 2015
International Business Machines Corporation, Armonk, NY (US);
Emre Alptekin, Fishkill, NY (US);
Ahmet S. Ozcan, Chappaqua, NY (US);
Viraj Y. Sardesai, Poughkeepsie, NY (US);
Kathryn T. Schonenberg, Wappingers Falls, NY (US);
Cung D. Tran, Newburgh, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A device is created by forming a layer of dielectric material on a silicon-containing region of a semiconductor substrate. An opening is created through the layer of dielectric material, the opening having a bottom and exposing the silicon-containing region. A metal stack is formed within the opening. The metal stack includes at least a first metal film on the silicon-containing region and a second gettering metal film on the first metal film. The metal stack is annealed to cause oxygen to migrate from the substrate to the gettering metal film. A first liner is formed within the opening. A fill metal is deposited in the opening.