The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2018
Filed:
Nov. 09, 2016
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Viraj Sardesai, Malta, NY (US);
Suraj K. Patil, Ballston Lake, NY (US);
Scott Beasor, Greenwich, NY (US);
Vimal Kumar Kamineni, Mechanicville, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76849 (2013.01); H01L 21/76802 (2013.01); H01L 21/76843 (2013.01); H01L 21/76877 (2013.01); H01L 21/76886 (2013.01); H01L 23/5226 (2013.01); H01L 23/53209 (2013.01);
Abstract
A process for forming a conductive structure includes the formation of a self-aligned silicide cap over a cobalt-based contact. The silicide cap is formed in situ by the deposition of a thin silicon layer over exposed portions of a cobalt contact, followed by heat treatment to react the deposited silicon with the cobalt and form cobalt silicide, which is an effective barrier to cobalt migration and oxidation.