The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 12, 2018

Filed:

Aug. 27, 2015
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Cung Tran, Newburgh, NY (US);

Emre Alptekin, Fishkill, NY (US);

Viraj Sardesai, Poughkeepsie, NY (US);

Reinaldo Vega, Wappingers Falls, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 29/66 (2006.01); H01L 29/49 (2006.01); H01L 29/45 (2006.01); H01L 21/3105 (2006.01); H01L 21/32 (2006.01); H01L 23/522 (2006.01); H01L 23/525 (2006.01); H01L 49/02 (2006.01); H01L 27/06 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823475 (2013.01); H01L 21/31055 (2013.01); H01L 21/32 (2013.01); H01L 21/823443 (2013.01); H01L 23/5228 (2013.01); H01L 23/5256 (2013.01); H01L 27/0629 (2013.01); H01L 28/20 (2013.01); H01L 28/24 (2013.01); H01L 29/45 (2013.01); H01L 29/4975 (2013.01); H01L 29/665 (2013.01); H01L 29/66515 (2013.01); H01L 29/66545 (2013.01); H01L 21/28518 (2013.01); H01L 21/76897 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Embodiments of present disclosure provide methods of forming a resistor. One such method can include forming a first transistor structure and a second transistor structure on a semiconductor substrate, wherein the first transistor structure includes a dummy gate thereon; forming a mask on the first transistor structure; forming a metal gate on the second transistor structure; removing the mask, after the forming of the metal gate, to expose the first transistor structure; and siliciding a top portion of the dummy gate of the first transistor structure to yield a resistor.


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