The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 16, 2019

Filed:

Apr. 24, 2017
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Ramachandra Divakaruni, Ossining, NY (US);

Sameer H. Jain, Beacon, NY (US);

Viraj Y. Sardesai, Poughkeepsie, NY (US);

Keith H. Tabakman, Fishkill, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 21/762 (2006.01); H01L 21/8238 (2006.01); H01L 21/84 (2006.01); H01L 27/12 (2006.01); H01L 21/28 (2006.01); H01L 21/8234 (2006.01); H01L 23/535 (2006.01); H01L 29/06 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/092 (2013.01); H01L 21/28088 (2013.01); H01L 21/76224 (2013.01); H01L 21/76283 (2013.01); H01L 21/823437 (2013.01); H01L 21/823475 (2013.01); H01L 21/823481 (2013.01); H01L 21/823842 (2013.01); H01L 21/823878 (2013.01); H01L 21/84 (2013.01); H01L 23/535 (2013.01); H01L 27/1203 (2013.01); H01L 29/0649 (2013.01); H01L 29/4966 (2013.01); H01L 29/66545 (2013.01);
Abstract

A third type of metal gate stack is provided above an isolation structure and between a replacement metal gate n-type field effect transistor and a replacement metal gate p-type field effect transistor. The third type of metal gate stack includes at least three different components. Notably, the third type of metal gate stack includes, as a first component, an n-type workfunction metal layer, as a second component, a p-type workfunction metal layer, and as a third component, a low resistance metal layer. In some embodiments, the uppermost surface of the first, second and third components of the third type of metal gate stack are all substantially coplanar with each other. In other embodiments, an uppermost surface of the third component of the third type of metal gate stack is non-substantially coplanar with an uppermost surface of both the first and second components of the third type of metal gate stack.


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