Company Filing History:

21 out of 164,108

International Business Machines Corporation

Years Active: 2009-2020

where 'Filed Patents' based on already Granted Patents

22 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 10741554 - Third type of metal gate stack for CMOS devices (2020-08-11),

2. 10262996 - Third type of metal gate stack for CMOS devices (2019-04-16),

3. 9875939 - Methods of forming uniform and pitch independent fin recess (2018-01-23),

4. 9679993 - Fin end spacer for preventing merger of raised active regions (2017-06-13),

5. 9634006 - Third type of metal gate stack for CMOS devices (2017-04-25),

6. 9601380 - Fin end spacer for preventing merger of raised active regions (2017-03-21),

7. 9515168 - Fin end spacer for preventing merger of raised active regions (2016-12-06),

8. 9514992 - Unidirectional spacer in trench silicide (2016-12-06),

9. 9391175 - Fin end spacer for preventing merger of raised active regions (2016-07-12),

10. 9349836 - Fin end spacer for preventing merger of raised active regions (2016-05-24),

11. 9331166 - Selective dielectric spacer deposition for exposing sidewalls of a finFET (2016-05-03),

12. 9111962 - Selective dielectric spacer deposition for exposing sidewalls of a finFET (2015-08-18),

13. 8951868 - Formation of functional gate structures with different critical dimensions using a replacement gate process (2015-02-10),

14. 8652914 - Two-step silicide formation (2014-02-18),

15. 8647954 - Two-step silicide formation (2014-02-11),

Title: Sameer Hemchand Jain: Innovating Metal Gate Technology in Semiconductor Devices

Introduction

Sameer Hemchand Jain, an accomplished inventor based in Beacon, NY, holds an impressive portfolio of 22 patents. His expertise lies in semiconductor technology, particularly in the development of advanced materials for metal gate stacks in CMOS devices.

Latest Patents

Among his latest innovations is a groundbreaking patent concerning a third type of metal gate stack for CMOS devices. This innovative design incorporates a series of unique components strategically arranged above an isolation structure. The stack features an n-type workfunction metal layer as the first component, a p-type workfunction metal layer as the second component, and a low resistance metal layer as the third component. In this design, the uppermost surfaces of all layers can either be coplanar or intentionally misaligned, enhancing the performance characteristics of both n-type and p-type field effect transistors.

Career Highlights

Sameer has made significant contributions to major technology companies, including IBM and Globalfoundries Inc. His experience in these organizations has played a crucial role in honing his skills in semiconductor device innovation and patent generation.

Collaborations

During his career, Sameer has collaborated with notable professionals in the field, such as Reinaldo Ariel Vega and Emre Alptekin. These collaborations have fostered a dynamic exchange of ideas, ultimately enriching the innovative processes behind his numerous patents.

Conclusion

Sameer Hemchand Jain stands out as a pivotal figure in the realm of semiconductor innovations. His contributions, particularly in the area of metal gate technology, demonstrate a commitment to advancing device performance and functionality. With over two decades of experience, Jain continues to inspire future generations of inventors in the fast-evolving semiconductor industry.

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