The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2016
Filed:
May. 07, 2015
International Business Machines Corporation, Armonk, NY (US);
Emre Alptekin, Fishkill, NY (US);
Sameer H. Jain, Beacon, NY (US);
Unoh Kwon, Fishkill, NY (US);
Zhengwen Li, Scarsdale, NY (US);
Hari V. Mallela, Poughquag, NY (US);
Ayse M. Ozbek, Fishkill, NY (US);
Cung D. Tran, Newburgh, NY (US);
Reinaldo A. Vega, Wappingers Falls, NY (US);
Richard S. Wise, Los Altos, CA (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor device includes a trench region in an interconnect level dielectric layer. A silicide layer is on the bottom of the trench region. Opposing minor sides of the trench region include a spacer layer, but the central portion of the trench region is substantially free from the spacer layer. The spacer layer is formed using an angled gas cluster ion beam.