Poughquag, NY, United States of America

Hari V Mallela

This inventor holds 28 USPTO granted patents and 1 published patent application, primarily in Vertical Field Effect Transistors. Top assignees: International Business Machines Corporation, Globalfoundries Inc.. Active years: 2016-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hari V Mallela. Retrieved from https://idiyas.com/inventor/hari-v-mallela

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 28 

% Patents Active = 71.4

Average Co-Inventor Count = 3.6

ph-index = 7

Forward Citations = 189(Granted Patents)


Company Filing History:


Years Active: 2016-2022

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Areas of Expertise:
RRAM
vFET
Field Effect Transistors
Substrate Bonding
Metallic Source/Drain
Multi-Threshold
Air Gap Spacers
High Density Layout
Anisotropic Dielectric
Epitaxial Fin Channel
Protective Fin Liner
Semiconductor Memory
28 patents (USPTO):Explore Patents

Title: Innovations and Contributions of Hari V Mallela

Introduction

Hari V Mallela, based in Poughquag, NY, is an accomplished inventor with an impressive portfolio of 28 patents. His work primarily revolves around advanced semiconductor technologies and innovative learning systems. With a strong foundation in research and development, Mallela has made significant contributions to various fields, particularly in hardware acceleration and multi-task learning.

Latest Patents

Among his latest patents is the "RRAM crossbar array structure for multi-task learning." This invention encompasses a multi-task learning system that employs a resistive random access memory crossbar array. The design features an input layer with multiple nodes to facilitate various tasks of the learning system, alongside a hidden layer with additional nodes and a shared hidden layer representing critical parameters essential for system performance.

Another notable patent is the "Subtractive vFET process flow with replacement metal gate and metallic source/drain." This method details a semiconductor device design involving a substrate with two differing device types based on active channel regions characterized by unique fin widths. This innovative approach enhances the functionality and scalability of semiconductor devices.

Career Highlights

Mallela has an extensive career, including tenure at leading companies such as IBM and Globalfoundries Inc. His work at these renowned organizations has equipped him with valuable experience and insights into the semiconductor industry, allowing him to push the boundaries of innovation further.

Collaborations

Throughout his career, Mallela has collaborated with notable professionals in the field, including Reinaldo Ariel Vega and Rajasekhar Venigalla. These collaborations have fostered an environment of shared ideas and innovations, contributing to the development of cutting-edge technologies.

Conclusion

Hari V Mallela continues to be a pivotal figure in the realm of innovation through his inventive spirit and dedication to advancing technology. His patents not only illustrate his prowess as an inventor but also offer promising solutions to complex challenges in the semiconductor industry and beyond.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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