The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10833048 B1

PDF
Full Text
Expired
Date of Patent:
Nov. 10, 2020

Filed:

Apr. 11, 2018
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Li-Wen Hung, Mahopac, NY (US);

Reinaldo Vega, Mahopac, NY (US);

Hari Mallela, Poughquag, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/80 (2013.01); H01L 24/05 (2013.01); H01L 24/08 (2013.01); H01L 2224/05017 (2013.01); H01L 2224/08148 (2013.01); H01L 2224/80201 (2013.01); H01L 2224/80345 (2013.01); H01L 2224/80894 (2013.01);
Abstract

A technique relates to a semiconductor device. First nanowires are formed on a first substrate, the first nanowires being electrically coupled to one or more first electrical sites on the first substrate. Second nanowires are formed on a second substrate, the second nanowires being electrically coupled to one or more second electrical sites on the second substrate. The first nanowires and the second nanowires are electrically coupled such that the one or more first electrical sites are electrically coupled to the one or more second electrical sites.


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