The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2020
Filed:
Aug. 13, 2018
International Business Machines Corporation, Armonk, NY (US);
Takashi Ando, Tuckahoe, NY (US);
Reinaldo Vega, Mahopac, NY (US);
Choonghyun Lee, Rensselaer, NY (US);
Hari Mallela, Poughquag, NY (US);
Li-Wen Hung, Mahopac, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
Multi-voltage threshold vertical transport transistors and methods of fabrication generally include forming the transistors with vertically oriented silicon fin channels for both the n-type doped field effect transistors (nFET) and the p-type doped field effect transistors (pFET). A silicon oxynitride interfacial layer is provided on sidewalls of the fins in the nFET and a silicon dioxide interfacial with aluminum is provided on sidewalls of the fins in the pFET to provide an aluminum induced dipole. A high k dielectric overlays the interfacial layers and a common work function metal overlays the high k dielectric layer to define a gate structure.