The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2020
Filed:
Sep. 25, 2018
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Hari V. Mallela, Poughquag, NY (US);
Robert R. Robison, Colchester, VT (US);
Reinaldo A. Vega, Mahopac, NY (US);
Rajasekhar Venigalla, Hopewell Junction, NY (US);
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 29/06 (2006.01); H01L 21/764 (2006.01); H01L 27/12 (2006.01); H01L 29/417 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/311 (2006.01); H01L 29/786 (2006.01); H01L 29/10 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0649 (2013.01); H01L 21/31111 (2013.01); H01L 21/764 (2013.01); H01L 27/1211 (2013.01); H01L 29/0653 (2013.01); H01L 29/0657 (2013.01); H01L 29/1033 (2013.01); H01L 29/41741 (2013.01); H01L 29/456 (2013.01); H01L 29/6653 (2013.01); H01L 29/66545 (2013.01); H01L 29/66666 (2013.01); H01L 29/66742 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/78642 (2013.01); H01L 21/2815 (2013.01); H01L 21/28141 (2013.01); H01L 21/823437 (2013.01); H01L 21/823487 (2013.01);
Abstract
A fin field effect transistor device with air gaps, including a source/drain layer on a substrate, one or more vertical fin(s) in contact with source/drain layer, a gate metal fill that forms a portion of a gate structure on each of the one or more vertical fin(s), and a bottom void space between the source/drain layer and the gate metal fill.