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For the Inventor, By the Inventor

Hopewell Junction, NY, United States of America

Rajasekhar Venigalla

This inventor holds 87 USPTO granted patents and 14 published patent applications and 1 EPO patent, primarily in Memory Device Technology (CPC class H01L29-66795). Top assignees: International Business Machines Corporation, Micron Technology Incorporated, Adeia Semiconductor Bonding Technologies Inc.. Active years: 2006-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Rajasekhar Venigalla. Retrieved from https://idiyas.com/inventor/rajasekhar-venigalla

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 87 

% Patents Active = 74.7

 

Average Co-Inventor Count = 3.8

ph-index = 11

Forward Citations = 464(Granted Patents)

Forward Citations (Not Self Cited) = 438(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Wappingers Falls, NY (US) (2006)
  • Hopewell Junction, NY (US) (2013 - 2024)
  • Boise, ID (US) (2020 - 2024)

Company Filing History:

goldMedal65 out of 166,409 
 
International Business Machines Corporation
 patents
silverMedal12 out of 39,253 
 
Micron Technology Incorporated
 patents
bronzeMedal6 out of 1,909 
 
Adeia Semiconductor Bonding Technologies Inc.
 patents
4. 2 out of 5,671 
 
Globalfoundries Inc.
 patents
5. 1 out of 30 
 
Adeia Semiconductor Solutions LLC
 patents
6. 1 out of 9 
 
Tessera LLC
 patents

Years Active: 2006-2026

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Areas of Expertise:
Microelectronic Devices
Memory Arrays
Vertical FET
Nanosheet Transistors
Gate Cut
Socket Design
Resistive Layers
Additive Core
Subtractive Liner
Channel Strain
Fin Field Effect Transistors
Hybrid Substrate Engineering
87 patents (USPTO):Explore Patents
1. 12765364 - Tier recess method (2026-10-13),
2. 12721129 - Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells (2026-08-25),
3. 12690251 - Method of forming nanosheet field effect transistors with partial inside spacers (2026-07-21),
4. 12603132 - Methods of forming microelectronic devices, and related microelectronic devices, memory devices, and electronic systems each with a filled trench within a stadium structure of at least one block (2026-04-14),
5. 12548621 - Socket design for a memory device (2026-02-10),
6. 12354658 - Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells (2025-07-08),
7. 12340846 - Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells (2025-06-24),
8. 12074165 - Gate cut with integrated etch stop layer (2024-08-27),
9. 11961556 - Socket design for a memory device (2024-04-16),
10. 11882774 - Low resistance crosspoint architecture (2024-01-23),
11. 11778837 - Memory with optimized resistive layers (2023-10-03),
12. 11776957 - Gate cut with integrated etch stop layer (2023-10-03),
13. 11552077 - Gate cut with integrated etch stop layer (2023-01-10),
14. 11380732 - Memory with optimized resistive layers (2022-07-05),
15. 11342446 - Nanosheet field effect transistors with partial inside spacers (2022-05-24),

Title: Rajasekhar Venigalla: Pioneering Inventor from Hopewell Junction

Introduction: Rajasekhar Venigalla is a distinguished inventor based in Hopewell Junction, NY, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Rajasekhar Venigalla holds several patents in various technological domains, including artificial intelligence, machine learning, and renewable energy systems.

Career Highlights: With a career spanning over two decades, Rajasekhar Venigalla has worked with leading tech companies, research institutions, and universities to develop cutting-edge solutions that have revolutionized industries.

Collaborations: Throughout his career, Rajasekhar Venigalla has collaborated with top engineers, scientists, and researchers to bring innovative ideas to life, resulting in successful products and technologies that have had a significant impact on society.

Conclusion: Rajasekhar Venigalla's passion for innovation and his relentless pursuit of excellence continue to inspire the next generation of inventors and technologists worldwide.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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