The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2023
Filed:
Jun. 22, 2022
Micron Technology, Inc., Boise, ID (US);
Lei Wei, Boise, ID (US);
Pengyuan Zheng, Boise, ID (US);
Kevin Lee Baker, Boise, ID (US);
Efe Sinan Ege, Boise, ID (US);
Adam Thomas Barton, Boise, ID (US);
Rajasekhar Venigalla, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A memory system may include separate amounts or types of resistive material that may be deposited over memory cells and conductive vias using separate resistive layers in the access lines. A first resistive material layer may be deposited over the memory cells prior to performing an array termination etch used to deposit the conductive via. The array termination etch may remove the first resistive material over the portion of the array used to deposit the conductive via. A second resistive material layer may be deposited after the etch has occurred and the conductive via has been formed. The second resistive material layer may be deposited over the conductive via.