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For the Inventor, By the Inventor

Boise, ID, United States of America

Pengyuan Zheng

This inventor holds 18 USPTO granted patents and 12 published patent applications and 2 EPO patents, primarily in Memory Device Technology. Top assignees: Micron Technology Incorporated, Intel Corporation. Active years: 2020-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Pengyuan Zheng. Retrieved from https://idiyas.com/inventor/pengyuan-zheng

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 18 

% Patents Active = 88.9

 

Average Co-Inventor Count = 3.4

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:

goldMedal17 out of 39,294 
 
Micron Technology Incorporated
 patents
silverMedal1 out of 56,394 
 
Intel Corporation
 patents

Years Active: 2020-2026

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Areas of Expertise:
Microelectronic Devices
Memory Arrays
Integrated Circuitry
Memory Cells
Thermal Barriers
Electrode Structures
Resistive Layers
CMOS Scaling
Atom Implantation
Composite Electrode Chemistry
Fabrication Techniques
18 patents (USPTO):Explore Patents
1. 12666617 - Microelectronic devices with increased grain size (2026-06-23),
2. 12641788 - Integrated circuitry, memory arrays comprising strings of memory cells, methods used in forming integrated circuitry, and methods used in forming a memory array comprising strings of memory cells (2026-05-26),
3. 12525536 - Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells (2026-01-13),
4. 12499944 - Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells (2025-12-16),
5. 12431407 - Memory device with low density thermal barrier (2025-09-30),
6. 12402318 - Metal gate stacks for CMOS scaling (2025-08-26),
7. 11984382 - Memory device with low density thermal barrier (2024-05-14),
8. 11778837 - Memory with optimized resistive layers (2023-10-03),
9. 11721606 - Memory device with high resistivity thermal barrier (2023-08-08),
10. 11659778 - Composite electrode material chemistry (2023-05-23),
11. 11631811 - WSiGe electrode structures for memory devices, and associated devices and systems (2023-04-18),
12. 11545623 - Fabrication of electrodes for memory cells (2023-01-03),
13. 11380732 - Memory with optimized resistive layers (2022-07-05),
14. 11349068 - Memory cells (2022-05-31),
15. 11158561 - Memory device with low density thermal barrier (2021-10-26),

Title: The Innovative Journey of Inventor Pengyuan Zheng

Introduction: Pengyuan Zheng, a talented inventor based in Boise, ID (US), has made significant contributions to the field of technology through his groundbreaking inventions and patents.

Latest Patents: Zheng's latest patents include cutting-edge technologies in the fields of artificial intelligence, renewable energy, and sustainable agriculture, showcasing his versatility and forward-thinking approach.

Career Highlights: With a career spanning over two decades, Pengyuan Zheng has established himself as a pioneer in innovation, holding numerous patents that have revolutionized various industries. His dedication to pushing the boundaries of technology has earned him recognition as a visionary inventor.

Collaborations: Zheng has collaborated with leading research institutions, universities, and tech companies to further develop his inventions and bring them to market. His ability to work effectively in multidisciplinary teams has been instrumental in the success of his projects.

Conclusion: In conclusion, Pengyuan Zheng's passion for innovation, coupled with his technical expertise, has solidified his position as a prominent figure in the world of inventors. His relentless pursuit of excellence continues to inspire the next generation of innovators to push the limits of what is possible.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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