The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2025
Filed:
Aug. 01, 2022
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Pengyuan Zheng, Boise, ID (US);
Yongjun Jeff Hu, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 43/40 (2023.01); H10B 41/27 (2023.01); H10B 41/40 (2023.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H10B 43/40 (2023.02); H10B 41/27 (2023.02); H10B 41/40 (2023.02); H10B 43/27 (2023.02);
Abstract
A variety of applications can include apparatus having a memory device structured with an array of memory cells and a complementary metal-oxide-semiconductor (CMOS) device coupled to the array. The CMOS device can include a gate electrode on and contacting the polysilicon gates of a p-channel metal-oxide-semiconductor (PMOS) transistor and a n-channel metal-oxide-semiconductor (NMOS) transistor of the CMOS device, where the gate electrode is a multi-metal stack. The multi-metal stack of the gate electrode can be two levels of different metal compositions.