The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2023
Filed:
May. 07, 2021
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Pengyuan Zheng, Boise, ID (US);
Yongjun J. Hu, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/126 (2013.01); H01L 45/06 (2013.01);
Abstract
Memory devices having electrode structures that increase in resistivity with thermal cycling, and associated systems and methods, are disclosed herein. In some embodiments, a memory device includes a memory element and an electrode structure electrically coupled to the memory element. The electrode structure can include a material comprising a composition of tungsten, silicon, and germanium.