The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 03, 2023

Filed:

Oct. 08, 2020
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Pengyuan Zheng, Boise, ID (US);

Yongjun J. Hu, Boise, ID (US);

Yao Jin, Meridian, ID (US);

Hongqi Li, Boise, ID (US);

Andrea Gotti, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/126 (2013.01); H01L 27/2427 (2013.01); H01L 27/2463 (2013.01); H01L 45/06 (2013.01); H01L 45/1233 (2013.01); H01L 45/141 (2013.01); H01L 45/16 (2013.01);
Abstract

Methods, systems, and devices for fabrication of memory cells are described. An electrode layer may have an initial thickness variation after being formed. The electrode layer may be smoothened prior to forming additional layers of a memory cell, thus decreasing the thickness variation. The subsequent layer fabricated may have a thickness variation that may be dependent on the thickness variation of the electrode layer. By decreasing the thickness variation of the electrode layer prior to forming the subsequent layer, the subsequent layer may also have a decreased thickness variation. The decreased thickness variation of the subsequent layer may impact the electrical behavior of memory cells formed from the subsequent layer. In some cases, the decreased thickness variation of the subsequent layer may allow for more predictable voltage thresholds for such memory cells, thus increasing the read windows for the memory cells.


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