The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2022
Filed:
Mar. 04, 2019
Intel Corporation, Santa Clara, CA (US);
Pengyuan Zheng, Boise, ID (US);
Stephen W. Russell, Boise, ID (US);
David R. Economy, Boise, ID (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A memory cell can include a phase change material layer and a first electrode layer adjacent to the phase change material layer and having a phase change material layer side oriented toward the phase change material layer and a bit line side opposite the phase change material layer side. A carbon nitride layer can be on the bit line side surface of the first electrode layer. In some examples, a nonconductive separator material can have a word line end and a bit line end, and can have a portion contacting the phase change material layer. The bit line end surface of the nonconductive separator material can be at least partially free of contact with the carbon nitride layer.