The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 14, 2024

Filed:

Oct. 01, 2021
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Pengyuan Zheng, Boise, ID (US);

David Ross Economy, Boise, ID (US);

Yongjun J. Hu, Boise, ID (US);

Kent H. Zhuang, Boise, ID (US);

Robert K. Grubbs, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/373 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01L 23/535 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3736 (2013.01); H01L 21/02186 (2013.01); H01L 21/0234 (2013.01); H01L 21/768 (2013.01); H01L 23/535 (2013.01);
Abstract

Methods, systems, and devices related to a memory device with a thermal barrier are described. The thermal barrier (e.g., a low density thermal barrier) may be positioned between an access line (e.g., a digit line or a word line) and a cell component. The thermal barrier may be formed on the surface of a barrier material by applying a plasma treatment to the barrier material. The thermal barrier may have a lower density than the barrier material and may be configured to thermally insulate the cell component from thermal energy generated in the memory device, among other benefits.


Find Patent Forward Citations

Loading…