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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12765364 B1

PDFFull Text
Date of Patent:
Oct. 13, 2026

Filed:

Mar. 25, 2024

Tier recess method

Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Rajasekhar Venigalla, Boise, ID (US);

Justin David Shepherdson, Meridian, ID (US);

Hiroaki Iuchi, Boise, ID (US);

Vladimir Samara, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:

Schwegman Lundberg & Woessner, P.A.

Primary Examiner:

Marvin Payen

Int. Cl.
CPC ...
H10W 20/41 (2026.01); G11C 16/04 (2006.01); H10B 41/20 (2023.01); H10B 41/35 (2023.01); H10B 43/20 (2023.01); H10B 43/35 (2023.01); H10W 20/00 (2026.01);
U.S. Cl.
CPC ...
H10W 20/435 (2026.01); G11C 16/0483 (2013.01); H10B 41/20 (2023.02); H10B 41/35 (2023.02); H10B 43/20 (2023.02); H10B 43/35 (2023.02); H10W 20/033 (2026.01);
Abstract

A method for making a vertical contact through levels of a memory device. A first liner is formed in an opening, and a second liner is formed over the first liner. The first liner is selectively removed from under the second liner to expose a first portion of the opening, such that the first liner remains intact over a second portion of the opening. The second liner is then removed, leaving the first liner overlying the second portion of the opening. A first portion of each of the layers of nitride materials in the first portion of the opening uncovered by the first liner is removed, the second portion of the first liner is removed, and a second portion of each of the layers of the nitride materials is removed in the second portion of the opening, wherein the second portion is less than the first portion.

Find Patent Forward Citations

Venigalla, Rajasekhar. (2026). Tier recess method (U.S. Patent No. 12765364). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12765364

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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