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For the Inventor, By the Inventor

Meridian, ID, United States of America

Justin D Shepherdson

USPTO Granted Patents = 12 

Average Co-Inventor Count = 5.2

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:

goldMedal9 out of 37,905 
 
Micron Technology Incorporated
 patents
where one patent can have more than one assignee

Years Active: 2021-2025

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12 patents (USPTO):
1. 12432984 - Microelectronic devices including stack structures having doped interfacial regions, and related systems and methods (2025-09-30),
2. 12288585 - Integrated circuitry comprising a memory array comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells (2025-04-29),
3. 12160993 - Memory devices including different tier pitches, and related electronic systems (2024-12-03),
4. 12137564 - Methods of forming microelectronic devices (2024-11-05),
5. 12063782 - Integrated assemblies having metal-containing liners along bottoms of trenches, and methods of forming integrated assemblies (2024-08-13),
6. 12040253 - Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells (2024-07-16),
7. 11751396 - Microelectronic devices including varying tier pitch, and related electronic systems (2023-09-05),
8. 11737275 - Microelectronic devices including filled slits and memory cell pillars, and related memory devices and electronic systems (2023-08-22),
9. 11705385 - Memory arrays and methods used in forming a memory array and conductive through-array-vias (TAVs) (2023-07-18),
10. 11538822 - Integrated assemblies having metal-containing liners along bottoms of trenches, and methods of forming integrated assemblies (2022-12-27),
11. 11264404 - Microelectronic devices including a varying tier pitch, and related electronic systems and methods (2022-03-01),
12. 11069598 - Memory arrays and methods used in forming a memory array and conductive through-array-vias (TAVs) (2021-07-20),

Title: The Innovative Genius of Justin D. Shepherdson

Introduction

Justin D. Shepherdson is a prominent inventor based in Meridian, ID, with an impressive portfolio of 10 patents. His work focuses on advancements in memory devices and associated electronic systems, contributing significantly to the field of microelectronics. Shepherdson's innovations are paving the way for new technologies that enhance performance and efficiency in memory storage.

Latest Patents

Among his latest patents, Shepherdson has developed innovative memory devices that incorporate different tier pitches. One notable patent describes a microelectronic device consisting of a first set of tiers, each comprising alternating levels of conductive and insulative materials. This device features multiple sets of tiers, with decreasing tier pitches, allowing for an efficient arrangement of memory cells. Another patent outlines methods of forming microelectronic devices, which include a structure with alternating insulative and conductive elements, improving the overall functionality and design of memory cells.

Career Highlights

Justin D. Shepherdson has dedicated his career to advancing microelectronic technology at Micron Technology Incorporated. His extensive research and development efforts have resulted in significant contributions to the field, further establishing him as an influential figure in the industry.

Collaborations

Throughout his career, Shepherdson has collaborated with talented colleagues such as Chet E. Carter and Nancy M. Lomeli. These partnerships have fostered a creative environment that encourages innovative solutions and enhances the collective expertise in microelectronics.

Conclusion

Justin D. Shepherdson is a visionary inventor whose work in microelectronic devices continues to drive innovation in the industry. His contributions not only reflect his personal dedication to scientific advancement but also highlight the collaborative spirit present in organizations like Micron Technology Incorporated. As technology progresses, Shepherdson's inventions are set to play a crucial role in shaping the future of memory devices and electronic systems.

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