The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2025
Filed:
May. 27, 2022
Micron Technology, Inc., Boise, ID (US);
Everett A. Mcteer, Eagle, ID (US);
Farrell M. Good, Meridian, ID (US);
John M. Meldrim, Boise, ID (US);
Jordan D. Greenlee, Boise, ID (US);
Justin D. Shepherdson, Meridian, ID (US);
Naiming Liu, Boise, ID (US);
Yifen Liu, Meridian, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A microelectronic device comprises conductive structures and insulative structures vertically alternating with the conductive structures. At least one of the insulative structures includes interfacial regions extending inward from vertical boundaries of the at least one of the insulative structures, and central region vertically interposed between the interfacial regions. The interfacial regions are doped with one or more of carbon and boron. The insulative structures comprise a lower concentration of the one or more of carbon and boron than the interfacial regions. Additional microelectronic devices, electronic systems, and methods are also described.