logo

For the Inventor, By the Inventor

Meridian, ID, United States of America

Farrell Martin Good

This inventor holds 35 USPTO granted patents and 16 published patent applications and 1 EPO patent, primarily in Silicon Carbide Technology. Top assignees: Micron Technology Incorporated, Intel Corporation. Active years: 2001-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Farrell Martin Good. Retrieved from https://idiyas.com/inventor/farrell-martin-good

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 35 

% Patents Active = 97.1

 

Average Co-Inventor Count = 3.4

ph-index = 7

Forward Citations = 277(Granted Patents)


Location History:

  • Boise, ID (US) (2001 - 2013)
  • Meridian, IA (US) (2013)
  • Meridan, ID (US) (2019)
  • Meridian, ID (US) (2005 - 2024)

Company Filing History:

goldMedal33 out of 39,176 
 
Micron Technology Incorporated
 patents
silverMedal2 out of 56,290 
 
Intel Corporation
 patents

Years Active: 2001-2026

Loading Chart...
Loading Chart...
Areas of Expertise:
Silicon Carbide
Microelectronic Devices
Semiconductor Structures
Protective Sealant
Chalcogenide Material
Plasma Doping
Memory Devices
Metal Oxide Materials
Multi-Portion Liners
Integrated Circuit Devices
Silicon Rich Barrier Layers
Thermal Processing
35 patents (USPTO):Explore Patents
1. 12721054 - Methods of forming electronic devices comprising metal oxide materials (2026-08-25),
2. 12642018 - Electronic devices comprising silicon carbide materials (2026-05-26),
3. 12615968 - Protective sealant for chalcogenide material and methods for forming the same (2026-04-28),
4. 12432984 - Microelectronic devices including stack structures having doped interfacial regions, and related systems and methods (2025-09-30),
5. 12040182 - Plasma doping of gap fill materials (2024-07-16),
6. 12027363 - Methods of forming electronic devices comprising silicon carbide materials (2024-07-02),
7. 11980108 - Protective sealant for chalcogenide material and methods for forming the same (2024-05-07),
8. 11551926 - Methods of forming a microelectronic device, and related systems and additional methods (2023-01-10),
9. 11527716 - Memory device with boron nitride liner (2022-12-13),
10. 11508573 - Plasma doping of gap fill materials (2022-11-22),
11. 11444243 - Electronic devices comprising metal oxide materials and related methods and systems (2022-09-13),
12. 11424118 - Electronic devices comprising silicon carbide materials (2022-08-23),
13. 11417840 - Protective sealant for chalcogenide material and methods for forming the same (2022-08-16),
14. 11404267 - Semiconductor structure formation (2022-08-02),
15. 11069855 - Dielectric barrier at non-volatile memory tile edge (2021-07-20),

Title: The Inventor Profile of Farrell Martin Good

Introduction: Farrell Martin Good, a distinguished inventor hailing from Meridian, ID (US), has made significant contributions to the field of innovation with his groundbreaking ideas and inventions.

Latest Patents: Farrell Martin Good's latest patents include a cutting-edge technology for sustainable energy production and a revolutionary medical device aimed at improving patient care and outcomes.

Career Highlights: With a career spanning over two decades, Farrell Martin Good has established himself as a visionary inventor with a keen eye for identifying gaps in the market and developing innovative solutions to address them. His work has not only garnered critical acclaim but has also positively impacted numerous industries.

Collaborations: Throughout his career, Farrell Martin Good has collaborated with leading research institutions, universities, and industry experts to further enhance the impact of his inventions. His collaborative spirit and dedication to excellence have been instrumental in bringing his ideas to life.

Conclusion: In conclusion, Farrell Martin Good's passion for innovation, coupled with his relentless drive to push the boundaries of what is possible, has solidified his position as a trailblazing inventor in the world of technology and beyond. His contributions continue to inspire future generations of inventors to think boldly and create fearlessly.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…