The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2026

Filed:

Aug. 08, 2022
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Santanu Sarkar, Boise, ID (US);

Robert K. Grubbs, Boise, ID (US);

Farrell M. Good, Meridian, ID (US);

Adam W. Saxler, Boise, ID (US);

Andrea Gotti, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/00 (2023.01); H10B 63/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10N 70/883 (2023.02); H10B 63/80 (2023.02); H10N 70/023 (2023.02); H10N 70/231 (2023.02); H10N 70/826 (2023.02); H10N 70/882 (2023.02); H10N 70/8828 (2023.02); H10N 70/8845 (2023.02);
Abstract

An electronic device comprising a stack structure comprising one or more stacks of materials and a metal oxide material adjacent to the stacks of materials. The materials of the stacks comprise one or more chalcogenide materials. The metal oxide material comprises aluminum oxide, aluminum silicate, hafnium oxide, hafnium silicate, zirconium oxide, zirconium silicate, or a combination thereof and the metal oxide material extends continuously from an upper portion of the one or more stacks of materials to a lower portion of the one or more stacks of materials. Additional electronic devices are disclosed, as are related systems and methods of forming an electronic device.


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