The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2026

Filed:

Jun. 14, 2024
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Santanu Sarkar, Boise, ID (US);

Farrell M. Good, Meridian, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 14/69 (2026.01); C01B 32/00 (2017.01); C01B 33/00 (2006.01); C23C 16/04 (2006.01); C23C 16/452 (2006.01); H10P 14/20 (2026.01); H10P 14/60 (2026.01); H10W 20/00 (2026.01);
U.S. Cl.
CPC ...
H10P 14/6905 (2026.01); C01B 32/00 (2017.08); C01B 33/00 (2013.01); C23C 16/045 (2013.01); C23C 16/452 (2013.01); H10P 14/2905 (2026.01); H10P 14/6336 (2026.01); H10W 20/072 (2026.01);
Abstract

An electronic device comprising a stack structure comprising one or more stacks of materials and one or more silicon carbide materials adjacent to the one or more stacks of materials. The materials of the one or more stacks comprise a single chalcogenide material and one or more of a conductive carbon material, a conductive material, and a hardmask material. The one or more silicon carbide materials comprises silicon carbide, silicon carboxide, silicon carbonitride, silicon carboxynitride, and also comprise silicon-carbon covalent bonds. The one or more silicon carbide materials is configured as a liner or as a seal. Additional electronic devices are disclosed, as are related systems and methods of forming an electronic device.


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