The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2023
Filed:
Jul. 06, 2021
Micron Technology, Inc., Boise, ID (US);
Indra V. Chary, Boise, ID (US);
Chet E. Carter, Boise, ID (US);
Anilkumar Chandolu, Boise, ID (US);
Justin B. Dorhout, Boise, ID (US);
Jun Fang, Boise, ID (US);
Matthew J. King, Boise, ID (US);
Brett D. Lowe, Boise, ID (US);
Matthew Park, Boise, ID (US);
Justin D. Shepherdson, Meridian, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A method used in forming a memory array and conductive through-array-vias (TAVs) comprises forming a stack comprising vertically-alternating insulative tiers and wordline tiers. A mask is formed comprising horizontally-elongated trench openings and operative TAV openings above the stack. Etching is conducted of unmasked portions of the stack through the trench and operative TAV openings in the mask to form horizontally-elongated trench openings in the stack and to form operative TAV openings in the stack. Conductive material is formed in the operative TAV openings in the stack to form individual operative TAVs in individual of the operative TAV openings in the stack. A wordline-intervening structure is formed in individual of the trench openings in the stack.