IDiyas

For the Inventor, By the Inventor

Boise, ID, United States of America

Jun Fang

USPTO Granted Patents = 8 

Average Co-Inventor Count = 8.5

ph-index = 1


Company Filing History:

goldMedal8 out of 37,905 
 
Micron Technology Incorporated
 patents

Years Active: 2021-2025

where 'Filed Patents' based on already Granted Patents

8 patents (USPTO):
1. 12279423 - Semiconductor devices comprising carbon-doped silicon nitride and related methods (2025-04-14),
2. 12250812 - Integrated assemblies and methods of forming integrated assemblies (2025-03-11),
3. 11889695 - Device, a method used in forming a circuit structure, a method used in forming an array of elevationally-extending transistors and a circuit structure adjacent thereto (2024-01-30),
4. 11705385 - Memory arrays and methods used in forming a memory array and conductive through-array-vias (TAVs) (2023-07-18),
5. 11600630 - Integrated assemblies and methods of forming integrated assemblies (2023-03-07),
6. 11282845 - Semiconductor devices comprising carbon-doped silicon nitride and related methods (2022-03-22),
7. 11177271 - Device, a method used in forming a circuit structure, a method used in forming an array of elevationally-extending transistors and a circuit structure adjacent thereto (2021-11-16),
8. 11069598 - Memory arrays and methods used in forming a memory array and conductive through-array-vias (TAVs) (2021-07-20),

Title: Innovations by Inventor Jun Fang in Integrated Assembly Technologies

Introduction

Jun Fang, an accomplished inventor based in Boise, ID, has made significant strides in the field of integrated assemblies through his innovative concepts and designs. With a total of seven patents to his name, Fang's contributions are paving the way for advancements in circuitry and memory cell technology.

Latest Patents

Among Jun Fang's latest patents is a groundbreaking design for integrated assemblies. This innovation includes an integrated assembly featuring a source structure with a stack of alternating conductive and insulative levels. The assembly employs cell-material-pillars that pass through the stack and are arranged in configurations that contain both memory-block-regions. These pillars incorporate channel material, which is crucial for establishing electrical connections with the source structure.

Fang's patent also describes a panel placed between the first and second memory-block-regions. This panel is designed as a container shape consisting of two materials, each compositionally different. Additionally, his recent patents describe methods for forming circuit structures, arrays of elevationally-extending transistors, and other related technologies.

Career Highlights

Jun Fang is currently affiliated with Micron Technology Incorporated, where his work focuses on developing advanced electronic components and improving integrated assembly technologies. His expertise and innovative spirit have allowed him to contribute significantly to the innovative projects at Micron, enhancing the capabilities of memory and computing devices.

Collaborations

Fang collaborates with notable coworkers Indra V Chary and Matthew Park at Micron Technology. Their combined efforts in research and development are driving the evolution of technology in memory and circuit structures, fostering a culture of innovation within the company.

Conclusion

With seven patents and continuous contributions to integrated technology, Jun Fang stands out as a formidable inventor in his field. His work not only enhances product performance but also sets new standards in assembly design and functionality. As technology continues to evolve, Fang's innovations will undoubtedly play a crucial role in shaping the future of electronics.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…