The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2025
Filed:
Jan. 09, 2023
Micron Technology, Inc., Boise, ID (US);
Jordan D. Greenlee, Boise, ID (US);
Nancy M. Lomeli, Boise, ID (US);
John D. Hopkins, Meridian, ID (US);
Jiewei Chen, Boise, ID (US);
Indra V. Chary, Boise, ID (US);
Jun Fang, Boise, ID (US);
Vladimir Samara, Boise, ID (US);
Kaiming Luo, Singapore, SG;
Rita J. Klein, Boise, ID (US);
Xiao Li, Boise, ID (US);
Vinayak Shamanna, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Some embodiments include an integrated assembly having a source structure, and having a stack of alternating conductive levels and insulative levels over the source structure. Cell-material-pillars pass through the stack. The cell-material-pillars are arranged within a configuration which includes a first memory-block-region and a second memory-block-region. The cell-material-pillars include channel material which is electrically coupled with the source structure. Memory cells are along the conductive levels and include regions of the cell-material-pillars. A panel is between the first and second memory-block-regions. The panel has a first material configured as a container shape. The container shape defines opposing sides and a bottom of a cavity. The panel has a second material within the cavity. The second material is compositionally different from the first material. Some embodiments include methods of forming integrated assemblies.