Vinayak Shamanna

USPTO Granted Patents = 17 (Patent Applications = 4)

Average Co-Inventor Count = 7.0

ph-index = 3

Forward Citations = 49(Granted Patents)

Company Filing History:

15 out of 37,905

Micron Technology Incorporated

where one patent can have more than one assignee

Years Active: 2013-2025

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17 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 12288585 - Integrated circuitry comprising a memory array comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells (2025-04-29),

2. 12250812 - Integrated assemblies and methods of forming integrated assemblies (2025-03-11),

3. 12089403 - Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells (2024-09-10),

4. 11937429 - Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus (2024-03-19),

5. 11744076 - Integrated assemblies, and methods of forming integrated assemblies (2023-08-29),

6. 11600630 - Integrated assemblies and methods of forming integrated assemblies (2023-03-07),

7. 11380705 - Integrated assemblies, and methods of forming integrated assemblies (2022-07-05),

8. 11271002 - Methods used in forming a memory array comprising strings of memory cells (2022-03-08),

9. 11239252 - Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus (2022-02-01),

10. 10727242 - Methods of forming an array of elevationally-extending strings of memory cells comprising a programmable charge storage transistor and arrays of elevationally-extending strings of memory cells comprising a programmable charge storage transistor (2020-07-28),

11. 10720446 - Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus (2020-07-21),

12. 10263007 - Methods of forming an array of elevationally-extending strings of memory cells comprising a programmable charge storage transistor and arrays of elevationally-extending strings of memory cells comprising a programmable charge storage transistor (2019-04-16),

13. 10157933 - Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus (2018-12-18),

14. 10014309 - Methods of forming an array of elevationally-extending strings of memory cells comprising a programmable charge storage transistor and arrays of elevationally-extending strings of memory cells comprising a programmable charge storage transistor (2018-07-03),

15. 9397210 - Forming air gaps in memory arrays and memory arrays with air gaps thus formed (2016-07-19),

Title: Inventor Vinayak Shamanna: Innovator in Integrated Circuitry

Introduction

Vinayak Shamanna is a prominent inventor based in Boise, ID, USA, known for his significant contributions to the field of integrated circuitry. With a remarkable portfolio of 17 patents, Shamanna has proven himself as a key innovator in the tech industry.

Latest Patents

Among his most recent patents, Shamanna's work includes advancements in integrated circuitry, particularly focusing on a memory array that comprises strings of memory cells. His innovative method involves forming a lower portion of a stack that contains vertically-alternating conductive tiers and insulative tiers. This lower portion features multiple layers of conductive and insulative materials, where the conductive tiers utilize sacrificial materials. These sacrificial components are subsequently replaced with conducting materials, leading to the construction of an upper portion with its own series of conductive and insulative layers. This dual-layer technique enhances the performance and efficiency of memory arrays, making it a valuable advancement in the technology sector.

Another groundbreaking patent involves integrated assemblies which possess a source structure and a stack of alternating conductive and insulative levels. The assembly includes cell-material pillars that are designed to pass through the stack, ensuring electrical connectivity with the source structure. This innovative configuration allows for superior memory cell organization and functionality.

Career Highlights

Shamanna's career has been marked by his association with leading technology companies. He has worked at Micron Technology Incorporated and Intel Corporation, where he has been instrumental in developing state-of-the-art memory technologies. His experience at these esteemed organizations has greatly influenced his innovative approach to circuitry design.

Collaborations

Throughout his career, Vinayak Shamanna has collaborated with notable colleagues, including Kunal R. Parekh and John David Hopkins. These partnerships have fostered a collaborative environment that enhances innovation and creativity in circuitry advancements.

Conclusion

Vinayak Shamanna continues to make significant strides in the field of integrated circuitry through his innovative patents and collaborations in the tech industry. His contributions are paving the way for future innovations in memory technology, reflecting his dedication to advancing our understanding and capabilities in integrated systems.

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