The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2024
Filed:
Feb. 01, 2022
Lodestar Licensing Group Llc, Evanston, IL (US);
M. Jared Barclay, Middleton, ID (US);
Merri L. Carlson, Boise, ID (US);
Saurabh Keshav, Boise, ID (US);
George Matamis, Eagle, ID (US);
Young Joon Moon, Boise, ID (US);
Kunal R. Parekh, Boise, ID (US);
Paolo Tessariol, Arcore, IT;
Vinayak Shamanna, Boise, ID (US);
Abstract
A method used in forming a memory array comprising strings of memory cells comprises forming a construction comprising a stack that have vertically-alternating insulative tiers and wordline tiers. An array of openings is formed in an uppermost portion of upper material that is above the stack, and the openings comprise channel openings and dummy openings. At least the uppermost portion of the upper material is used as a mask while etching the channel openings and the dummy openings into a lower portion of the upper material. The channel openings are etched into the insulative and wordline tiers. The channel openings are etched deeper into the construction than the dummy openings, and channel material is formed in the channel openings after the etching. Structures independent of method are disclosed.