The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2016
Filed:
Oct. 02, 2013
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
James Mathew, Boise, ID (US);
Gordon Haller, Boise, ID (US);
Ronald A. Weimer, Boise, ID (US);
John Hopkins, Boise, ID (US);
Vinayak K. Shamanna, Boise, ID (US);
Sanjeev Sapra, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2006.01); H01L 29/78 (2006.01); H01L 21/764 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78 (2013.01); H01L 21/764 (2013.01); H01L 27/1157 (2013.01); H01L 27/11524 (2013.01);
Abstract
A memory array has first and second memory cells over a semiconductor and an isolation region extending into the semiconductor. The isolation region includes an air gap between charge-storage structures of the first and second memory cells and a thickness of dielectric over the air gap and contained between the first and second memory cells.