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For the Inventor, By the Inventor

Boise, ID, United States of America

Ronald Allen Weimer

USPTO Granted Patents = 99 

 

Average Co-Inventor Count = 2.2

ph-index = 18

Forward Citations = 1,836(Granted Patents)

Forward Citations (Not Self Cited) = 1,730(Oct 12, 2025)


Inventors with similar research interests:


Location History:

  • Bosie, ID (US) (2008)
  • Boise, ID (US) (1996 - 2022)

Company Filing History:

goldMedal94 out of 37,905 
 
Micron Technology Incorporated
 patents
silverMedal4 out of 54,664 
 
Intel Corporation
 patents
bronzeMedal1 out of 16,070 
 
USA As Represented by Secretary of the Navy
 patents

Years Active: 1996-2025

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99 patents (USPTO):
1. 12484290 - Active area salicidation for NMOS and PMOS devices (2025-11-25),
2. 11257838 - Thickened sidewall dielectric for memory cell (2022-02-22),
3. 10629652 - Dual-layer dielectric in memory device (2020-04-21),
4. 10608005 - Thickened sidewall dielectric for memory cell (2020-03-31),
5. 10134809 - Dual-layer dielectric in memory device (2018-11-20),
6. 9704923 - Dual-layer dielectric in memory device (2017-07-11),
7. 9397210 - Forming air gaps in memory arrays and memory arrays with air gaps thus formed (2016-07-19),
8. 9082714 - Use of etch process post wordline definition to improve data retention in a flash memory device (2015-07-14),
9. 8569130 - Forming air gaps in memory arrays and memory arrays with air gaps thus formed (2013-10-29),
10. 8518184 - Methods and systems for controlling temperature during microfeature workpiece processing, E.G., CVD deposition (2013-08-27),
11. 8384192 - Methods for forming small-scale capacitor structures (2013-02-26),
12. 8294192 - Use of dilute steam ambient for improvement of flash devices (2012-10-23),
13. 8228743 - Memory cells containing charge-trapping zones (2012-07-24),
14. 8153502 - Methods for filling trenches in a semiconductor material (2012-04-10),
15. 8119483 - Methods of forming memory cells (2012-02-21),

Title: Ronald Allen Weimer - Pioneering Innovations in Memory Cell Technology

Introduction:

Ronald Allen Weimer, a visionary inventor based in Boise, ID, has made significant contributions to the field of memory cell technology. With a remarkable portfolio of 98 patents, his groundbreaking work has revolutionized the industry.

Latest Patents:

Weimer's latest patents showcase his expertise in developing cutting-edge memory cell devices with enhanced charge retention characteristics. One such invention involves a thickened sidewall dielectric for memory cells, incorporating nanodots and innovative spacer widths to optimize performance. Additionally, his dual-layer dielectric in memory devices improves the functionality and efficiency of memory arrays.

Career Highlights:

Having worked at esteemed companies like Micron Technology Incorporated and Intel Corporation, Weimer has honed his skills and expertise in semiconductor technology. His passion for innovation and relentless pursuit of excellence have been instrumental in shaping the future of memory cell devices.

Collaborations:

Throughout his illustrious career, Weimer has collaborated with industry experts such as Don Carl Powell and John T. Moore. Together, they have shared knowledge, ideas, and insights to push the boundaries of technological innovation in the semiconductor industry.

Conclusion:

Ronald Allen Weimer's inventive spirit and dedication to excellence have established him as a pioneer in memory cell technology. His numerous patents and collaborations underscore his commitment to advancing the field, and his contributions will undoubtedly continue to inspire future generations of inventors and innovators.

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