The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2012
Filed:
May. 16, 2006
LI LI, Boise, ID (US);
Ronald Weimer, Boise, ID (US);
Richard Stocks, Boise, ID (US);
Chris Hill, Boise, ID (US);
Li Li, Boise, ID (US);
Ronald Weimer, Boise, ID (US);
Richard Stocks, Boise, ID (US);
Chris Hill, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Methods of filling cavities or trenches. More specifically, methods of filling a cavity or trench in a semiconductor layer are provided. The methods include depositing a first dielectric layer into the trench by employing a conformal deposition process. Next, the first dielectric layer is etched to create a recess in the trench within the first dielectric layer. The recesses are then filled with a second dielectric layer by employing a high density plasma deposition process. The techniques may be particularly useful in filling cavities and trenches having narrow widths and/or high aspect ratios.