The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2013
Filed:
Jul. 28, 2011
James Mathew, Boise, ID (US);
Gordon Haller, Boise, ID (US);
Ronald A. Weimer, Boise, ID (US);
John Hopkins, Boise, ID (US);
Vinayak K. Shamanna, Boise, ID (US);
Sanjeev Sapra, Boise, ID (US);
James Mathew, Boise, ID (US);
Gordon Haller, Boise, ID (US);
Ronald A. Weimer, Boise, ID (US);
John Hopkins, Boise, ID (US);
Vinayak K. Shamanna, Boise, ID (US);
Sanjeev Sapra, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Methods of forming air gaps in memory arrays and memory arrays with air gaps thus formed are disclosed. One such method may include forming an isolation region, having a first dielectric, through a charge-storage structure that is over a semiconductor, the isolation region extending into the semiconductor; forming a second dielectric over the isolation region and charge-storage structure; and forming an air gap in the isolation region so that the air gap passes through the charge-storage structure and so that a thickness of the first dielectric is between the air gap and the second dielectric.